| 1. | Nitridation of large silicon surfaces at low temperatures by electron cyclotron resonance plasma
等离子体对硅表面的低温大面积氮化 |
| 2. | To overcome the bottle - neck , electron cyclotron resonance - plasma enhanced metalorganic chemical vapor deposition was developed
为了解决这一问题，电子回旋共振ecr等离子体增强有机金属气相沉积( ecr - pemocvd )应运而生。 |
| 3. | Microwave electron cyclotron resonance ( mwecr ) cvd is a newly developed technique for plasma processing and materials fabrication , such as plasma etching and films deposition
本论文介绍了我们对ecr等离子体cvd系统的测试、 bn薄膜的制备和薄膜光学特性研究。 |
| 4. | Yak hairs were treated by the microwave electron cyclotron resonance plasma reactive ion etching ( ecr - rie ) equipment to improve its property of weave
摘要采用微波电子回旋共振等离子体反应离子刻蚀( ecr - rie )装置对牦牛毛纤维进行表面改性，从而改善牦牛毛的可纺性。 |
| 5. | Sub - thesis is mainly on the test and research of the photoelectric properties of a - si : h thin film deposited by microwave electron cyclotron resonance chemical vapor deposition ( mw - ecr cvd ) system
本论文主要是对mw - ecrcvd系统沉积的a - si : h薄膜进行了一系列的光电特性的测试研究工作。 |
| 6. | But the deposition rate and quality of a - si : h was primarily affected by preparation methods . recently , the microwave electron cyclotron resonance ( mwecr ) cvd method was weightily studied
为了获得高速沉积下的高品质a - si : h薄膜，使其能够产业化，微波电子回旋共振化学气相沉积( mwecrcvd )方法在国际上受到了人们广泛的重视。 |
| 7. | In view of its virtue of high degree of electron and ion generations , the microwave electron cyclotron resonance ( mwecr ) cvd method is expected to deposit device quality a - si : h at high deposition rate
鉴于微波电子回旋共振化学气相沉积( mwecrcvd )系统具有电子和离子产生率高等优点，人们期望它能在较高的沉积速率下获得器件级质量的a - si ： h薄膜。 |
| 8. | The fourier transform infrared ( ftir ) spectrum is an effective technology for studying the hydrogen content ( ch ) and the silicon - hydrogen bonding configuration ( si - hn ) of hudrogenated amorphous silicon ( a - si : h ) films . in the paper , ch and si - hn of a - si : h films , fabricated at different ratio of h2 / sih4 by microwave electron cyclotron resonance plasma chemical vapor ( wmecr cvd ) method , have been obtained by analyzing their ftir spectra that are treated by baseline fitting and gaussian function fitting . the effects of ratio of h2 / sih4 on ch and si - hn are studied
Fourier红外透射( ftir )谱是研究氢化非晶硅( a - si : h )薄膜中氢含量( c _ h )及硅-氢键合模式( si - h _ n )最有效的手段，对于微波等离子体化学气相沉积( mwecrcvd )方法在不同h _ 2 sih _ 4稀释比下制备出的氢化非晶硅薄膜，我们通过红外透射光谱的基线拟合、高斯拟合分析，得出了薄膜中的氢含量，硅氢键合方式及其组分，并分析了这些参数随h _ 2 sih _ 4稀释比变化的规律。 |
| 9. | Therefore , the diagnostics of electrical and optical characteristic of plasma form the basic respects of plasma diagnostics . the author reports in detail in the dissertation the experimental investigation on the phenomena of some common discharge systems at typical operation status such as dc glow ; rf ( radio frequency ) glow and microwave ecr ( electron cyclotron resonance ) discharge
创新之处： （ 1 ）提出了双原子分子转动分辨发射光谱的拟合方法，并利用拟合方法进行了氮气直流辉光放电产生的第一负带转动分辨光谱和磁控溅射沉积cnx膜过程中cn基团的振动带的转动线型拟合，获得了相应的转动温度。 |
| 10. | In this thesis , we have mainly studied the characteristics of chf3 , c6h6 and cf4 electron cyclotron resonance ( ecr ) plasma using langmuir probe and optical emission spectroscopy ( oes ) . the relative concentration of different radicals in chf3 plasma and the effect of chf3 / c6h6 ratio on bond configuration of a - c : f films were discussed . it was showed that h , f , c2 were the main radicals among radicals of h , f , c2 , ch and f2 in chf3 ecr plasma
重点研究了chf _ 3 、 cf _ 4和chf _ 3 c _ 6h _ 6放电等离子体中基团的分布；分析了不同基团的相对密度随宏观放电条件(微波输入功率、放电气压、源气体流量比)的变化规律；探讨了等离子体中各种基团的生成途径；在不同源气体流量比的条件下沉积了a - c ： f薄膜并通过傅立叶变化红外吸收光谱( ftir )的测量得到了薄膜中键结构的信息；分析了a - c ： f薄膜的沉积速率及其键结构与等离子体空间基团分布状态之间的关联。 |
